학술논문
Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 59(6):2872-2877 Dec, 2012
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 \times 10^{6}}$ TeV/g. Particle fluence up to $5 \times 10^{14}$ n.cm $^{-2}$ is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.