학술논문
Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments
Document Type
Periodical
Author
Source
IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 11(5):1015-1026 Jan, 2005
Subject
Language
ISSN
1077-260X
1558-4542
1558-4542
Abstract
We present a theoretical model for gain and noise saturation in quantum dash (QDash) semiconductor optical amplifiers. The model is based on the density matrix formalism and addresses static saturation spectra. The calculations are confirmed by a series of experiments which highlight the unique properties of these amplifiers. We demonstrate a high gain, a wide bandwidth, and high saturation power. The saturation spectrum is shown to be asymmetric, emphasizing saturation at short wavelength. The asymmetry stems from the high energy tail of the density of state function in those quantum wire (QWire) like gain media as well as from the interactions with the wetting layer.