학술논문

Enhanced nFinFET ESD performance

Document Type

Conference

Author

Lee, Jian-Hsing; Prabhu, Manjunatha; Iyer, Natarajan Mahadeva; Banghart, Edmund; Li, You; Yu, Ronghua; Poro, Richard; Hogle, Nicholas; Gebreselaie, Ephrem; Pandey, Shesh Mani; Gauthier, Robert

Source

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017 39th. :1-10 Sep, 2017

Subject

Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Electrostatic discharges
Stress
Leakage currents
Charge carrier processes
Schottky diodes
Implants
Transient analysis

Language

Abstract

A very simple and useful scheme to enhance the ESD performance of the nFinFET is proposed. By incorporating the N-Well (NW) with the nFinFET, it becomes a low holding-voltage SCR if the NW contact is ohmic and becomes a high holding-voltage SCR if the NW contact is a Schottky contact.

Online Access

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