부산대학교 도서관

In this paper, we examine the effect of electrostatic discharge (ESD)and thermal compression bonding on the integrity of dielet assembly on the silicon interconnect fabric (Si-IF)technology. Our preliminary results suggest that the Si-IF assembly process is robust to ESD events. This simplifies and possibly eliminates the ESD protection requirements on dielets. We demonstrate that a thin film dielet, with ~ 6 nm thick silicon dioxide, can sustain bonding pressure of up to 200 MPa at a bonding temperature of 250°C. To further investigate the effect of thermal compression bonding on dielets, bonding pressure simulations are studied for a typical dielet with 300 nm oxide at a bonding pressure of 100 MPa.