학술논문
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1572-1579 Mar, 2024
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
This work demonstrates 4H-SiC high voltage lateral MOSFETs with double-reduced surface fields (RESURFs) technology. The device design has been performed to balance electric field distribution and to enhance the blocking capability. Consequently, the experimental results show a significant improvement in breakdown voltage (BV), with the highest BV reaching 1800 V. A Baliga’s figure of merit (BFOM) of 128 MW/cm2 has been achieved, which is the best performance among the reported SiC lateral MOSFETs. Detailed analysis are, furthermore, conducted to study the effects of the p-top RESURF length and the drift region length on both on- and blocking-performance. The device capacitance characteristics are also presented. These 4H-SiC lateral MOSFETs can be attractive candidates for power IC applications.