부산대학교 도서관

We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO 2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative V th shift is mitigated by using a high-k dielectric. The maximum output current of 0.45 A/mm for a 0.5 μm gate length shows that the above concept can be promising for switching applications.