학술논문
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Document Type
Conference
Author
Source
2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-6 Apr, 2020
Subject
Language
ISSN
1938-1891
Abstract
A systematic investigation of the effect of temperature and electric field on the degradation of 100 nm AlGaN/GaN HEMTs stressed under on- and off-state conditions has been carried out. The shape of the degradation behavior is analyzed and compared between stress conditions. The shape parameter of an Avrami-model was found to be reduced at higher temperatures. Failure analysis was performed by delayering with subsequent SEM and AFM investigation of the semiconductor surface. All devices showed surface damage in the vicinity of the drain-sided gate-edge. Devices stressed at high voltage and high temperature exhibited more and deeper pits than devices stressed at low drain-bias and low temperature, even though all devices have been stressed to the same electrical degradation of 10 % decrease in I DSS .