학술논문
Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components
Document Type
Conference
Author
Source
2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-6 Mar, 2023
Subject
Language
ISSN
1938-1891
Abstract
In this study, a thermal neutron (TN) radiation test was conducted for DRAM devices of ly nm technology. Accordingly, the write recovery time (tWR) degradation was observed to range from 1-ns (degradation) to more than 15 ns (failure). Specifically, permanent timing degradation is expected, owing to secondary particles generated from the interactions of 10 B and TN. The samples from two manufacturers were compared and exhibited an 8.9 times maximum difference in the degradation cross-section.