학술논문
3.3kV SiC MOSFETs designed for low on-resistance and fast switching
Document Type
Conference
Author
Source
2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :389-392 Jun, 2012
Subject
Language
ISSN
1943-653X
1063-6854
1946-0201
1063-6854
1946-0201
Abstract
This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.