학술논문
Photoluminescence and Raman Studies on $\mathrm{GaAs}_{1-\mathrm{x}}\mathrm{Bi}_{\mathrm{X}}$ Grown on GaAs
Document Type
Conference
Author
Source
2020 IEEE 8th International Conference on Photonics (ICP) Photonics (ICP), 2020 IEEE 8th International Conference on. :1-2 May, 2020
Subject
Language
Abstract
Photoluminescence (PL) and Raman studies were carried out to investigate the effect of growth rate on $\mathrm{GaAs}_{1-\mathrm{x}}\mathrm{sBi}_{\mathrm{x}}$ alloys. The samples were grown between 0.09 and 0.5 $\mu\mathrm{m}/\mathrm{hour}$, At room temperature, the lowest PL peak energy (1.07 eV) was obtained by sample grown at 0.23 $\mu\mathrm{m}/\mathrm{hour}$. Samples grown at lower and higher than 0.23 $\mu\mathrm{m}/\mathrm{hour}$ showed PL peak energy redshift and blueshift, respectively. Raman data show peaks at 162, 228, 270 and 295 cm −1 which correspond to the GaAs like phonons. The GaBi like phonons were also observed at 183 and 213 cm −1 but their intensity are significantly weaker compared to GaAs like phonons. PL and Raman data show that Bi incorporation into GaAs lattice is dependent on the growth rate and in this study, the highest Bi concentration was obtained for sample grown at 0.23 $\mu \mathrm{m}/\mathrm{hour}$.