학술논문

A broadband CMOS amplifier in D band using pole-tuning technique with T-type network
Document Type
Conference
Source
2018 IEEE MTT-S International Wireless Symposium (IWS) Wireless Symposium (IWS), 2018 IEEE MTT-S International. :1-3 May, 2018
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Bandwidth
CMOS technology
Physics
Gain
Power generation
Power amplifiers
Silicon
CMOS
millimeter-wave (mm-wave)
broadband amplifiers
bandwidth extension
T-type network
pole-tuning
Language
Abstract
A novel pole-tuning technique with T-type network for interstage bandwidth extension is proposed in this paper. For verification, a four-stage amplifier based on the pole-tuning technique with T-type network has been designed and implemented in a 65-nm bulk CMOS technology. The fabricated prototype achieves a peak gain of 9.5 dB at 122 GHz with a 3-dB bandwidth of 26 GHz, while consuming a dc power of 62 mW. The saturation output power and the output P 1dB are 8.6 dBm and 4.6 dBm, respectively. The chip occupies a small silicon area of 0.27 mm 2 including all testing pads.