학술논문

On Using Cell-Aware Methodology for SRAM Bit Cell Testing
Document Type
Conference
Source
2023 IEEE European Test Symposium (ETS) European Test Symposium (ETS), 2023 IEEE. :1-4 May, 2023
Subject
Computing and Processing
Engineering Profession
Nuclear Engineering
Power, Energy and Industry Applications
Signal Processing and Analysis
Memory management
Random access memory
Europe
System-on-chip
Transistors
Integrated circuit reliability
Testing
Memory testing
SRAM
Cell-Aware models
Cell-Aware test
Structural testing
Language
ISSN
1558-1780
Abstract
The shrinking of technology nodes has led to high density memories containing large amounts of transistors which are prone to defects and reliability issues. Their test is generally based on the use of well-known March algorithms targeting Functional Fault Models (FFMs). This paper presents a novel approach for memory testing which relies on Cell-Aware (CA) methodology to further improve the yield of System on Chips (SoCs). Consequently, using CA methodology converts memory testing from functional to structural testing. In this work, the preliminary flow of the CA-based memory testing methodology is presented. The generation of the CA model for the SRAM bit cell has been demonstrated as a case study. The generated CA model and the structural representation of the memory are used by the ATPG to test the bit cell in the presence of short and open defects. The generated test patterns are able to detect both static and dynamic faults in the bit cell with a test coverage of 100%.