학술논문
Impact of Design on High Frequency Performances of Advanced MIM Capacitors Using SiN Dielectric Layers
Document Type
Conference
Author
Source
IEEE MTT-S International Microwave Symposium Digest, 2005. Microwave Symposium Microwave Symposium Digest, 2005 IEEE MTT-S International. :291-294 Jun, 2005
Subject
Language
ISSN
0149-645X
Abstract
High frequency characterizations of ultra thin 32 nm PECVD Si 3 N 4 dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates. The frequency dependent behavior of capacitance is extracted over a wide frequency bandwidth. An equivalent circuit model of capacitors including four parameters is developed to explain this behavior. Results are compared to values obtained by 3D Electro-Magnetic modeling.