학술논문

In situ microwave characterization of insulator thin films for interconnects of advanced circuits
Document Type
Conference
Source
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) Microwave symposium Microwave Symposium Digest, 1998 IEEE MTT-S International. 2:961-964 vol.2 1998
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Transistors
Dielectrics and electrical insulation
Dielectric thin films
Dielectric constant
Microwave devices
Insulator testing
Optical films
Reflectometry
Dielectric measurements
Frequency measurement
Language
ISSN
0149-645X
Abstract
An accurate and simple method to in-situ characterize the dielectric constant of insulator thin films is developed. Optimized devices under test are capacitive patches where insulator film is set in the future operational configuration. Dielectric constant is extracted by an optimization procedure based upon subnanosecond time domain reflectometry measurement and simulation. /spl epsiv//sub r/ is given into a 100 MHz-10 GHz frequency bandwidth.