학술논문
ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation
Document Type
Conference
Author
Source
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2018 18th European Conference on. :1-3 Sep, 2018
Subject
Language
ISSN
1609-0438
Abstract
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.