학술논문

Mathematical Framework of Tetramorphic MWCNT Configuration for VLSI Interconnect
Document Type
Periodical
Source
IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 19:749-759 2020
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Quantum capacitance
Delays
Resistance
Inductance
Very large scale integration
Couplings
Interconnects
multiwall carbon nanotube (MWCNT)
propagation delay
very large scale integration
tetramorphic configuration
Language
ISSN
1536-125X
1941-0085
Abstract
Having a 1D material like Multiwall Carbon Nanotube (MWCNT) as a potential candidate for high speed Very Large Scale Integration (VLSI) interconnect creates a good scope to reduce the delay by estimating the parasitic elements i.e. Resistance ($R$), Inductance ($L$) and Capacitance ($C$) properly. We have contrived an innovative configuration namely Tetramorphic (TM) for the bundle of MWCNTs with four different diameters. We have focused on 45 nm, 22 nm, 11 nm and 7 nm technology nodes to justify the novelty of our proposed configuration over the existing MWCNT bundle configurations. Having the parasitic $RLC$ elements for a specific technology node, the diameter optimization took place in this work. Subsequently, we obtain the propagation delay results for local, semi-global and global level interconnect. Finally, we compare the results with the other existing configuration to show the supremacy of our introduced configuration for MWCNT bundle to explore high speed VLSI interconnect and represent crosstalk delay and power dissipation. Moreover, this configuration is highly dense which will offer the size shrinkage feature in a substantial manner.