부산대학교 도서관

We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 $^{\circ}\hbox{C}$. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The $I_{\rm on}/I_{\rm off}$ ratios are $\sim\!\! \hbox{10}^{7}$ with field-effect mobilities of $ \sim$5.3 and $\sim\!\hbox{4.7}\ \hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$ for Al and Au source–drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS–metal interfaces.