학술논문
Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications
Document Type
Conference
Author
Source
2007 IEEE Symposium on VLSI Technology VLSI Technology, 2007 IEEE Symposium on. :160-161 Jun, 2007
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (˜5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (V t ) of ˜ -0.35V, an equivalent oxide thickness (EOT)˜1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.