학술논문
On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(12):984-987 Dec, 2006
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
This letter correlates fast transient charging (FTC) in high-$k$ gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-$k$ film due to O scavenging process induced by the $\hbox{HfSi}_{x}$ metal electrode. A hypothesis correlating O scavenging from the high-$k$ dielectric to O vacancy formation, which contributes to FTC, is proposed.