학술논문

Back-end-of-line integration of 2D materials on silicon microchips
Document Type
Conference
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Integrated circuits
Performance evaluation
Two-dimensional displays
Silicon
Transistors
Electron devices
Language
ISSN
2156-017X
Abstract
Two-dimensional (2D) materials have excellent electronic and thermal properties that could help to improve the performance of electronic devices and circuits. However, scalable 2D materials synthesis and their integration in silicon microchips (with, for example, complementary metal-oxide-semiconductor, CMOS) transistors presents some challenges, mainly related to the presence of local defects that degrade device/circuit performance. In this invited article, we discuss the integration of 2D materials in silicon microchips. We analyze the type of materials and their properties, the main synthesis and manipulation methods, the type of circuits fabricated, the electronic performance achieved, as well as the future challenges and solutions. We focus on microchips with pre-patterned CMOS circuits on which the 2D material is deposited at the back-end-of-line (BEOL).