부산대학교 도서관

High-temperature $\beta $ -Ga {2} O {3} Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350°C, were fabricated on $({\bar{2}}{01})$ -Ga 2 O 3 single crystal substrates using intentionally-oxidized ruthenium (RuO x ) Schottky contacts (SCs), with x =~ 2.1. These RuO x : $\beta $ -Ga 2 O 3 SCs were characterized by rectification ratios of more than 10 10 at ±3 V and very low reverse leakage current densities of less than 1 nAcm −2 (~1 pA) at −3.0 V, that were unchanged from 24 to 350 °C. These very low high-temperature leakage currents were due to their extremely high Schottky barriers of 2.2 eV at 350°C, that were stable against repeated operation at this temperature. Although not optimized for photodetection, these SCs could detect UVC ( $\lambda = {248}$ nm) radiation at a temperature of 350 °C with a UVC/dark current ratio of ~10 3 . The very high and thermally stable rectifying barriers of these RuO x : $\beta $ -Ga 2 O 3 SCs makes them strong candidates for use in high temperature $\beta $ -Ga 2 O 3 rectifying diodes and UVC photodetectors.