학술논문
Ultra-Large Silicon Diode for Characterizing Low-Intensity Radiation Environments
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):770-776 Apr, 2024
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
We present applications of a large commercial silicon diode (50 cm $^{2}\,\,\times 500\,\,{\mu }\text{m}$ ) for monitoring low-intensity radiation fields, together with benchmarks via Monte Carlo simulations. After energy calibration with monoenergetic proton and alpha beams in the 2–8-MeV range, we show that the detector is capable of measuring atmospheric radiation at the ground level, not only in terms of a total number of events but also through their energy deposition distribution. Focusing on the atmospheric-like neutron spectrum, we prove that the diode detection cross Section is more than five orders of magnitude larger with respect to static random access memory (SRAM)-based solutions and highlight the potential use cases in the accelerator’s radiation environment.