학술논문

Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 61(6):3458-3465 Dec, 2014
Subject
Nuclear Engineering
Bioengineering
Ionizing radiation sensors
Single event upsets
SRAM cells
Test facilities
Large Hadron Collider
Semiconductor device measurement
Radiation effects
Large hadron collider (LHC) radiation monitoring
single-event effects (SEEs) characterization
single event upsets (SEU) monitor
single-event effects (SEEs)
SRAM
test facilities
Language
ISSN
0018-9499
1558-1578
Abstract
An 8 Mbit 90-nm memory is proposed as a new high energy hadron fluence sensor. The obtained cross sections for protons (30 MeV up to 480 MeV) and thermal neutrons as well as their dependency on the TID together with the control circuitry is presented. Burst events were recorded during irradiation and an analysis on the causes has been performed proposing an algorithm to mitigate and correct the burst multiple events. Finally, the effects of the energy dependency on the measurements in the LHC mixed radiation field are discussed.