학술논문
Development of MFMIS Gatestack with Thick Hafnium Zirconium Oxide (HZO) for Nonvolatile Memory Application
Document Type
Conference
Author
Source
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2023 7th IEEE. :1-3 Mar, 2023
Subject
Language
Abstract
In this work, a thick HZO-based gate device is examined for memory applications owing to its wider memory window. The TiN - HZO- TiN film layers are demonstrated by measuring electrical properties such as polarization, capacitance, and current. In addition, to apply a thick HZO stack to an integrated memory device, we develop an MFMIS etching process and define a gate structure with a sufficient memory window of 4 V.