학술논문

Characterizing SEU Cross Sections of 12- and 28-nm SRAMs for 6.0, 8.0, and 14.8 MeV Neutrons
Document Type
Conference
Source
2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-6 Mar, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Radiation effects
Random access memory
Single event upsets
Estimation
Energy measurement
Neutrons
FinFETs
Language
ISSN
1938-1891
Abstract
This paper studies the characteristics of the single event upset (SEU) cross sections in 12- and 28-nm SRAMs induced by low-energy neutrons. Experimental results show that the SEU event cross sections of the 12-nm FinFET SRAM and 28-nm planar SRAM drop less significantly from 14.8 MeV to 6.0 MeV compared with 65-nm SRAM. This result shows that the importance of neutrons below 10 MeV elevates for terrestrial SER estimation for advanced SRAMs.