학술논문

Simulation of Half-Center Oscillator Circuits Employing Newly Developed Models of Fabricated Memristors
Document Type
Conference
Source
2022 International Symposium on Multidisciplinary Studies and Innovative Technologies (ISMSIT) Multidisciplinary Studies and Innovative Technologies (ISMSIT), 2022 International Symposium on. :504-508 Oct, 2022
Subject
Communication, Networking and Broadcast Technologies
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Biological system modeling
Memristors
Rhythm
Reliability engineering
Stability analysis
Integrated circuit modeling
Hardware design languages
memristor
modelling
resistive switching
half center oscillator
weak inversion analogue circuits
Language
ISSN
2770-7962
Abstract
This work aims to demonstrate the utilization of fabricated memristors in bioinspired analog circuits. To this end, two types of memristors of the structures Pt/TiO 2 /TiO x /Pt and Au/TiO 2 /TiO x /Au have been fabricated and characterized. The current-voltage measurement results were used to derive models for these devices both through curve fitting using MATLAB and consulting models proposed by other groups. A Verilog-A model was developed for modelling our fabricated memristor, which was used in Cadence Spectre simulations of an analog weak inversion Half Center Oscillator (HCO) circuit. The simulations show, through comparison of HCOs employing our memristors, linear resistors and no memristors or resistors, that the varying resistance of memristors create a dynamic damping effect and result in the modification of oscillation amplitude, rhythm and improved cycle stability.