학술논문
Optimal Design of Nanoscale Triple-Gate Devices
Document Type
Conference
Author
Source
2006 IEEE international SOI Conferencee Proceedings International SOI Conference, 2006 IEEE. :143-144 Oct, 2006
Subject
Language
ISSN
1078-621X
Abstract
The impacts of corner rounding in TG MOSFETs on DIBL and device characteristics were analyzed via 3D numerical simulations. Properly rounded corners of TG device can improve SCEs or increase drive current. Semi-cylindrical gate structure is preferable for heavily-doped devices, while rectangular gate structure appears better for lightly-doped devices, respectively