학술논문

Silicon x-ray backlighter improvement by targets with spike-like microstructures
Document Type
article
Source
AIP Advances, Vol 14, Iss 3, Pp 035221-035221-8 (2024)
Subject
Physics
QC1-999
Language
English
ISSN
2158-3226
Abstract
In order to accurately probe high energy density matter states, it is vital to create powerful x-ray backlighters. One approach to create such x-ray sources is based on the usage of short-pulse, high-energy lasers, which greatly benefits from an optimization of the laser target coupling. Here, the spectral and temporal x-ray emission profiles of structured silicon targets with micron-sized spikes on the front surface are studied at laser intensities of 1017 W cm−2. The laser pulse length is varied between 1 and 20 ps with an energy of up to 1 kJ. The structured targets show an up to 13× enhancement of silicon Heα emission compared to flat foils with a well-defined, sharp emission pulse profile. Furthermore, the performance of the microstructured targets is compared to targets with a CH shield as well as foils irradiated with a UV prepulse.