학술논문
Dark exciton anti-funneling in atomically thin semiconductors
Document Type
article
Author
Source
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Subject
Language
English
ISSN
2041-1723
Abstract
Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating dark excitons.