학술논문
Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
Document Type
article
Author
Source
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Subject
Language
English
ISSN
2041-1723
Abstract
The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.