학술논문

Ferromagnetism in Cr-doped topological insulator TlSbTe2
Document Type
article
Source
APL Materials, Vol 3, Iss 8, Pp 083302-083302-7 (2015)
Subject
Biotechnology
TP248.13-248.65
Physics
QC1-999
Language
English
ISSN
2166-532X
Abstract
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1−xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.