학술논문
Transient current technique for charged traps detection in silicon bonded interfaces
Document Type
article
Author
Source
AIP Advances, Vol 9, Iss 2, Pp 025307-025307-9 (2019)
Subject
Language
English
ISSN
2158-3226
Abstract
Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabrication of monolithic radiation sensors. Such techniques allow the joining of various absorbers on the backside of thinned CMOS circuity without intermediate layers or through vias. This paper presents a method for the electrical characterization of such bonded interfaces based on the Transient Current Technique (TCT). This method can be extended to the investigation of any type of solid-state devices.