학술논문
Resistive switching studies in VO2 thin films
Document Type
article
Author
Source
Scientific Reports, Vol 10, Iss 1, Pp 1-6 (2020)
Subject
Language
English
ISSN
2045-2322
Abstract
Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.