부산대학교 도서관

Chemical Vapor Deposition (CVD)-graphene has potentially been integrated with silicon (Si) substrates for developing graphene/n-Si Schottky junction solar cells prepared with the top window structure. However, there are drawbacks to prepared devices such as complex silicon dioxide (SiO2)-etching steps, low fill factors and stability of doped devices. In this work, SiO2 patterns are simply formed using a sputtering process rather than the previous complex method. Additionally, the fill factor for prepared devices is developed by using transferred residue-free multi-graphene layers. The usage of 3 graphene layers improves the power conversion efficiency (PCE) to 7.1%. A recorded PCE of around 17% with a fill factor of 74% is achieved by the HNO3 dopant. To overcome the issue of stability, Poly(methyl methacrylate) as an encapsulated layer is introduced. Hence, the doped devices show great stability for storage in air for 2 weeks, and devices recovered about 95% of their efficiency. This work shows that the developed fabrication process is suitable to develop simple, low cost, stable and efficient graphene/Si Schottky solar cells.