학술논문
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design
Document Type
article
Author
Source
IEEE Journal of the Electron Devices Society, Vol 6, Pp 201-206 (2018)
Subject
Language
English
ISSN
2168-6734
Abstract
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etchstop layer can effectively improve the uniformity of the device threshold voltage (VTH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a VTH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.