학술논문
Visible Blind 4H-SiC P $^{+}$-N UV Photodiode Obtained by Al Implantation
Document Type
article
Author
Source
IEEE Photonics Journal, Vol 7, Iss 3, Pp 1-6 (2015)
Subject
Language
English
ISSN
1943-0655
Abstract
This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p+-n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (2 at -100 V) was measured on 1-mm2 area devices up to 90 °C. A peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of about 50% and a visible blindness> 103 were demonstrated. The absence of optically active defects and nitrogen donor-aluminum acceptor pair recombination centers was monitored by optical measurements in the visible range.