학술논문
Quasiparticle tunnel electroresistance in superconducting junctions
Document Type
article
Author
Source
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Subject
Language
English
ISSN
2041-1723
Abstract
The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.