학술논문
GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究 / Collaborative Design Study of the Irradiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits
Document Type
Academic Journal
Author
Source
电子与封装 / Electronics and Packaging. 24(1):61-67
Subject
Language
Chinese
ISSN
1681-1070
Abstract
创新地开展p型栅GaN器件的单粒子辐照与建模研究,提取的单粒子激励电流被加载用于全GaN的低压差线性稳压器(LDO)稳压电路的单粒子设计中,获得了该电路单粒子敏感节点,最终得到该节点在重载状态与轻载状态时对应的单粒子瞬态(SET)响应分别为500 mV/60 ns,1 210 mV/60 ns.上述研究建立起GaN器件-全GaN基电路的T-CAD/SPICE单粒子效应协同设计方法.
Single event irradiation and modeling of p-gate GaN devices are innovatively carried out.The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO)voltage stabilizing circuit,and a single event sensitive node of the circuit is obtained.The single event transient(SET)responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1 210 mV/60 ns respectively.The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.
Single event irradiation and modeling of p-gate GaN devices are innovatively carried out.The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO)voltage stabilizing circuit,and a single event sensitive node of the circuit is obtained.The single event transient(SET)responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1 210 mV/60 ns respectively.The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.