학술논문
利用吸合电极实现亚微米电极间隙的可制造性设计 / Design for manufacturability of submicron electrode gap using pull-in electrodes
Document Type
Academic Journal
Author
Source
传感器与微系统 / Transducer and Microsystem Technologies. 43(1):103-110
Subject
Language
Chinese
ISSN
2096-2436
Abstract
提出一种利用吸合电极结构的可制造性设计手段,实现亚微米电极间隙的方法.利用静电力拉动可动电极位移实现超出光刻和刻蚀能力的超窄间隙,使得敏感电极间隙由1.3 μm减小至300 nm,通过该方法获得的亚微米电极间隙对工艺离散性不敏感,电极间隙的不一致性可以下降1个数量级.结合本文提出的I2BAR结构的可制造性设计方法,可以实现完整的微机电系统(MEMS)振荡器可制造性设计.
A realization method for submicron electrode gap by using the manufacturability design of pull-in electrode structure is proposed.The movable electrode displacement is pulled by using electrostatic force,ultra narrow gaps beyond the lithography and etching ability are achieved,so that the sensitive electrode gap can be reduced from 1.3 μm to 300 nm.The submicron electrode gap achieved by this method is not sensitive to the process dispersion,and the inconsistency of electrode gap can be reduced by an order of magnitude.Combined with the manufacturability design method of the proposed I2 BAR structure,a complete manufacturability design of MEMS oscillator can be realized.
A realization method for submicron electrode gap by using the manufacturability design of pull-in electrode structure is proposed.The movable electrode displacement is pulled by using electrostatic force,ultra narrow gaps beyond the lithography and etching ability are achieved,so that the sensitive electrode gap can be reduced from 1.3 μm to 300 nm.The submicron electrode gap achieved by this method is not sensitive to the process dispersion,and the inconsistency of electrode gap can be reduced by an order of magnitude.Combined with the manufacturability design method of the proposed I2 BAR structure,a complete manufacturability design of MEMS oscillator can be realized.