학술논문

Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss
Document Type
Academic Journal
Source
中国化学工程学报(英文版) / Chinese Journal of Chemical Engineering. 64(12):241-249
Subject
Polybenzoxazine
Organosilicon
Composite
Dielectric constant
Language
Chinese
ISSN
1004-9541
Abstract
The evolution of electronic communication technology raises higher requirements for low dielectric con-stant(low-k)materials.For this,a benzoxazine functional organosilicon(HP-aptes)with dense Si-O-Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol-gel method.Then,a series of polybenzoxazine composites(PPHP)were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer(P-aptmds)and HP-aptes.The double crosslink-ing networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites,which endowed the composites with enhanced low-k prop-erties.When the content of HP-aptes is 30%(mass),the crosslinking density was 2.05 ×10-3 mol·cm-3,while that of PP-aptmds was 3.31 × 10-3 mol·cm-3.In addition,the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056,respectively.