학술논문
p-Si/n-Ga2O3异质结制备与特性研究 / Fabrication and Characteristics of p-Si/n-Ga2O3 Heterojunction
Document Type
Academic Journal
Author
陈沛然; 焦腾; 陈威; 党新明; 刁肇悌; 李政达; 韩宇; 于含; 董鑫; CHEN Peiran; JIAO Teng; CHEN Wei; DANG Xinming; DIAO Zhaoti; LI Zhengda; HAN Yu; YU Han; DONG Xin
Source
人工晶体学报 / Journal of Synthetic Crystals. 53(1):73-81
Subject
Language
Chinese
ISSN
1000-985X
Abstract
本实验采用金属有机化学气相沉积(MOCVD)工艺,在p(111)型Si衬底上制备了 p-Si/n-Ga2O3结构的PN结.通过X射线衍射仪、原子力显微镜等对样品进行了晶体结构、表面形貌、表面粗糙度等的表征分析;通过磁控溅射与蒸镀方法在样品上生长Ti/Au电极并进行Ⅰ-Ⅴ特性曲线、开启电压、开关电流比、反向饱和电流、理想因子、零偏压下的势垒高度等结特性测试,研究了掺杂浓度与薄膜厚度对PN结特性的影响,并对其原因进行了分析;通过二步生长法和缓冲层温度优化实验,减少了 Si衬底与β-Ga2O3之间的晶格失配与热失配带来的影响,对薄膜与器件特性进行了优化.最终获得了表面粗糙度最低可达到4.21 nm的高质量n型β-Ga2O3薄膜,以及具有较低理想因子(42.1)的PN结.
PN junction with p-Si/n-Ga2O3 structure was developed by metal organic chemical vapor deposition(MOCVD)technology on p-type Si(111)substrate.The crystal structure,surface morphology and surface roughness were measured by X-ray diffractometer and atomic force microscope.Then Ti/Au electrodes on these samples were developed by magnet sputtering and evaporation for testing the PN junction characteristics such as Ⅰ-Ⅴ curve chart,threshold voltage,on-off current ratio,reverse saturation current,ideal factor,and the barrier height at zero bias voltage.The regulation of PN junction characteristics with growing parameters such as doping concentration and film thickness was studied,and the reasons were given.The crystal quality of β-Ga2 O3 thin film and the characteristics of the devices were improved by two-step growing method.A set of PN junction samples were fabricated at three different temperatures when the buffer was developed.Finally,the best conditions of fabricating the PN junction devices was found,and the lattice mismatch and thermal mismatch between Si substrate and β-Ga2O3 thin film were reduced.A high quality n-type β-Ga2O3 thin film with surface roughness of 4.21 nm and a PN junction with low ideal factor of 42.1 was obtained.
PN junction with p-Si/n-Ga2O3 structure was developed by metal organic chemical vapor deposition(MOCVD)technology on p-type Si(111)substrate.The crystal structure,surface morphology and surface roughness were measured by X-ray diffractometer and atomic force microscope.Then Ti/Au electrodes on these samples were developed by magnet sputtering and evaporation for testing the PN junction characteristics such as Ⅰ-Ⅴ curve chart,threshold voltage,on-off current ratio,reverse saturation current,ideal factor,and the barrier height at zero bias voltage.The regulation of PN junction characteristics with growing parameters such as doping concentration and film thickness was studied,and the reasons were given.The crystal quality of β-Ga2 O3 thin film and the characteristics of the devices were improved by two-step growing method.A set of PN junction samples were fabricated at three different temperatures when the buffer was developed.Finally,the best conditions of fabricating the PN junction devices was found,and the lattice mismatch and thermal mismatch between Si substrate and β-Ga2O3 thin film were reduced.A high quality n-type β-Ga2O3 thin film with surface roughness of 4.21 nm and a PN junction with low ideal factor of 42.1 was obtained.