학술논문
Production of Detector-Grade Silicon by Neutron Transmutation Doping
Document Type
stp-paper
Source
Semiconductor Processing, Jan 1984, Vol. 1984, No. 850, pp. 546-557.
Subject
Language
English
Abstract
High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.