학술논문
Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit
Document Type
Working Paper
Author
Ok, Jong Mok; Mohanta, Narayan; Zhang, Jie; Yoon, Sangmoon; Okamoto, Satoshi; Choi, Eun Sang; Zhou, Hua; Briggeman, Megan; Irvin, Patrick; Lupini, Andrew R.; Pai, Yun-Yi; Skoropata, Elizabeth; Sohn, Changhee; Li, Haoxiang; Miao, Hu; Lawrie, Benjamin; Choi, Woo Seok; Eres, Gyula; Levy, Jeremy; Lee, Ho Nyung
Source
Subject
Language
Abstract
Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels.
Comment: accepted in Sci. Adv
Comment: accepted in Sci. Adv