학술논문
Electrical switching of the perpendicular Neel order in a collinear antiferromagnet
Document Type
Working Paper
Author
He, Wenqing; Zhang, Tianyi; Zhou, Yongjian; Wan, Caihua; Wu, Hao; Cui, Baoshan; Xia, Jihao; Zhang, Ran; Guo, Tengyu; Chen, Peng; Zhao, Mingkun; Jiang, Leina; Grutter, Alexander; Balakrishnan, Purnima P.; Caruana, Andrew J.; Kinane, Christy J.; Langridge, Sean; Yu, Guoqiang; Song, Cheng; Han, Xiufeng
Source
Subject
Language
Abstract
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the N\'eel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the N\'eel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.