학술논문
Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Document Type
Working Paper
Author
Source
Phys. Rev. Lett. 119, 056803 (2017)
Subject
Language
Abstract
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
Comment: Phys. Rev. Lett. accepted version. 21 pages, 9 figures
Comment: Phys. Rev. Lett. accepted version. 21 pages, 9 figures