학술논문
Quantum communication networks with defects in silicon carbide
Document Type
Working Paper
Author
Ecker, Sebastian; Fink, Matthias; Scheidl, Thomas; Sohr, Philipp; Ursin, Rupert; Arshad, Muhammad Junaid; Bonato, Cristian; Cilibrizzi, Pasquale; Gali, Adam; Udvarhelyi, Péter; Politi, Alberto; Trojak, Oliver J.; Ghezellou, Misagh; Hassan, Jawad Ul; Ivanov, Ivan G.; Son, Nguyen Tien; Burkard, Guido; Tissot, Benedikt; Hendriks, Joop; Gilardoni, Carmem M.; van der Wal, Caspar H.; David, Christian; Astner, Thomas; Koller, Philipp; Trupke, Michael
Source
Subject
Language
Abstract
Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.
Comment: 20 pages, 8 figures
Comment: 20 pages, 8 figures