부산대학교 도서관

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of local microscopic distortions on the local Mott transition, which demands structural characterizations at the relevant length scale. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a V2O3 thin film, with a resolution of 30 nm. Through temperature-dependent metal-insulator phase coexistence mapping, we report a variation in the local transition temperature of up to 7 K across the film and the presence of the transition hysteresis at the nanoscale. Furthermore, a detailed quantitative analysis demonstrates that the spatial heterogeneity of the transition is closely tied to the tilting of crystallographic planes in the pure insulating phase. We develop a structural model allowing us to interpret these tilts as variation of the monoclinic distortion during the rhombohedral-monoclinic phase transition. Our work highlights the impact of local heterogeneous lattice distortions on the Mott transition and lays the groundwork for future innovations in harnessing strain heterogeneity within Mott systems for the next-generation computational technologies.