학술논문
Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
Document Type
Working Paper
Author
Scandale, W.; Arduini, G.; Cerutti, F.; Esposito, L. S.; Garattini, M.; Gilardoni, S.; Losito, R.; Masi, A.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Smirnov, G.; Burmistrov, L.; Dubos, S.; Puill, V.; Stocchi, A.; Bandiera, L.; Guidi, V.; Mazzolari, A.; Romagnoni, M.; Murtas, F.; Addesa, F.; Cavoto, G.; Iacoangeli, F.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Denisov, A. S.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Malyarenko, L. G.; Borg, J.; James, T.; Hall, G.; Pesaresi, M.
Source
Subject
Language
Abstract
We present the results of an experimental study of multiple scattering of positively charged high energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.
Comment: arXiv admin note: text overlap with arXiv:1910.00250 minor fixes
Comment: arXiv admin note: text overlap with arXiv:1910.00250 minor fixes