학술논문
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Document Type
Working Paper
Author
Source
2019 Symposium on VLSI Technology
Subject
Language
Abstract
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
Comment: Presented at VLSI 2019 Circuit and Technology Symposium, JFS4p5
Comment: Presented at VLSI 2019 Circuit and Technology Symposium, JFS4p5