학술논문
Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices
Document Type
Working Paper
Author
Source
IEEE Transaction on Nanotechnology 5, 6 (2006) p. 649
Subject
Language
Abstract
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.